Ease of Paralleling. Maximum Ratings. TOAB. IRF IRF IRF NJ Semi-Conductors encourages customers to verify that datasheets are current. IRF A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power. Part, IRF Category, Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel. Description, A, V, Ohm, N-channel.
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B, Mar This datasheet is subject to change without notice. Please note that some Vishay documentation may still make reference to the IEC definition.
The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance throughout the industry. Repetitive rating; pulse width datasheft by maximum junction temperature see fig.
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Products may be manufactured at one of several qualified locations. Case Temperature td off tf tr Fig. The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations.
B, Mar 7 8 9 10 Fig.
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