Technical Seminar on Bi-cmos Technology. In BiCMOS technology, both the MOS and bipolar device are fabricated on the same chip. CONTENTS Introduction Abstract Characteristics of CMOS Technology Characteristics of Bipolar Technology Combine advantages in BiCMOS Technology. Explore BiCMOS Technology with Free Download of Seminar Report and PPT in PDF and DOC Format. Also Explore the Seminar Topics.

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In this case, the nonrecurring engineering costs of designing the SOC chip and its mask set will far exceed the design cost for a system with standard programmable digital parts, standard analog and RF functional blocks, and discrete components.

For Vin high, M 1 is on. Digital processors also allow tuning of analog blocks, such as centering filter-cutoff frequencies. Both use a bipolar push-pull output stage. In steady-state operation, Q 1 and Q 2 are never on simultaneously, semina the power consumption low. An attentive reader may notice the similarity between this structure and the TTL gate, described in the addendum on bipolar design. Therefore, turning off the devices as fast as possible is of utmost importance. This happens through Z 1.

A single n -epitaxial layer is used to implement both the PMOS transistors and bipolar npn transistors. Speed is the only restricting factor, especially when large capacitors must be driven. The history of semiconductor devices starts in ‘s when Lienfed and Heil technoloty proposed the mosfet. The p -buried layer improves the packing density, because the collector-collector spacing of the bipolar devices can be reduced. Discussing one is sufficient to illustrate the basic concept and properties of the gechnology.

Because the process step required for both CMOS and bipolar are similar, these steps cane be shared for both of them. The same is also true for VOL. The analog section of these chips includes wideband amplifiers, filters, phase locked loops, analog-to-digital converters, digital-to-analog converters, operational technologu, current references, and voltage references.

This technology opens a wealth of new opportunities, because it is now possible to combine the high-density integration of MOS logic with the current-driving capabilities of bipolar technnology. A system that requires power-supply voltages greater than 3. Sincethe state-of-the-art bipolar CMOS structures have been converging.

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We first discuss the gate in general and then provide a more detailed discussion of the steady-state and transient characteristics, and the power consumption. The following properties of the voltage-transfer characteristic can be derived by inspection.

This leads to a steady-state leakage current and power consumption.

Before a high-performance analog system can be integrated on a digital chip, the analog circuit blocks must have available critical passive components, such as resistors and capacitors.

Many of these systems take advantage of the digital processors in an SOC chip texhnology auto-calibrate the analog section of the chip, including canceling de offsets and reducing linearity errors within data converters.

A k-gate ECL circuit, for instance, consumes 60 W for a signal swing of 0.

Download your Full Reports for Bicmos Technology. Adding these resistors not only reduces the transition times, but also has a positive effect on the power consumption.

Seminar On Bicmos Technology – ppt download

The concept of system-on-chip SOC has evolved as the number of gates available to a designer has increased and as CMOS technology has migrated from a minimum feature size of several microns to close to 0. The shortcomings of these elements as resistors, as can the poly silicon gate used as part of the CMOS devices.

Consider the high level. Various schemes have been proposed to get around this problem, resulting in gates with logic swings equal to the supply voltage at the expense of increased complexity. The resulting current spike can be large and has a detrimental effect on both the power consumption and the supply noise. However it took 30 years before this idea was applied to functioning devices to be used in practical applications, and up to the late this trend took a turn when MOS technology caught up and there was a cross over between bipolar and MOS share.

Consider for instance the circuit of Figure 0. Q 2 acts as an emitter-follower, so that Vout rises to VDD? First of all, the logic swing of the circuit is smaller than the supply voltage.



Download your Full Reports for Bicmos Technology Complementary MOS offers an inverter with near-perfect characteristics such as high, symmetrical noise margins, technoloogy input and low output impedance, high gain in the transition region, high packing density, and low power dissipation.

Built-in self-test functions of the analog block are also possible through the use of on-chip digital processors.

Driving PC board traces consume significant power, both in overcoming the larger capacitances on the PC board and through larger signal swings to overcome signal cross talk and noise on the PC board. A low Vinon the other hand, causes M 2 and Q 2 to turn on, while M 1 and Q 1 are in the offstate, resulting in a high output level.

Analog or mixed-signal SOC integration is inappropriate for designs that will allow low production bcimos and low margins. For instance, during a high-to-low transition on the input, M 1 turns off first. The impedances Z 1 and Z 2 are necessary to remove the base charge of the bipolar transistors rechnology they are being turned off.

It comes at the expense of an increased collector-substrate capacitance. Examples of analog or mixed-signal SOC devices include analog modems; broadband wired digital communication chips, such as DSL and cable modems; Wireless telephone chips that combine voice band codes with base band modulation and demodulation function; and ICs that function as the complete read channel for disc drives.

For similar fanouts and a comparable technology, the propagation delay is about two to five times smaller than for the CMOS gate. The high power consumption makes very large scale integration difficult. Some of these schemes will be discussed later. In recent years, improved technology has made it possible bicms combine complimentary MOS transistors and bipolar devices in a single process at a reasonable cost.

In the BiCMOS structure, the input stage and the phase-splitter are implemented in MOS, which results in a better performance and higher input impedance.